| PART |
Description |
Maker |
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| IS42LS32400A IS42LS16800A-10B IS42LS16800A-10TI IS |
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HYI39SC128800FE HYI39SC128800FE-6 HYI39SC128800FE- |
128-MBit Synchronous DRAM
|
Qimonda AG
|
| HYI39S128160F |
128-MBit Synchronous DRAM
|
Qimonda
|
| HYB39S128160FE-7 HYB39S128160FEL-7 |
128-MBit Synchronous DRAM
|
Qimonda AG
|
| HYB39L128160AT |
128-MBIT SYNCHRONOUS LOW-POWER DRAM
|
Infineon Technologies AG
|
| IC42S81600-8TG IC42S81600L-8TG IC42S16800L-8TG IC4 |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 86）位× 4银行28 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4）M中的x 86）位× 4银行128 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4）M中的x 86）位× 4银行28 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 816）位× 4银行28 - Mbit的）同步动态RAM
IC DUAL SPDT ANALOG SW 16-SOIC
Single/Dual Supply, Quad SPDT Switch
Single/Dual Supply, Quad SPST Switch
ER 14C 14#16 SKT PLUG
RES 10K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RES 100K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RES 100K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
|
Electronic Theatre Controls, Inc.
Toshiba, Corp.
Microchip Technology, Inc.
Integrated Circuit Solution Inc
Integrated Circuit Solu...
|
| IC42S16800D-7TL IS42S81600D-6T IS42S81600D-6TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| CY14E101J2-SXIT CY14B101J1-SXI CY14B101J1-SXIT CY1 |
1-Mbit (128 K 8) Serial (I<sup>2</sup>C) nvSRAM
1-Mbit (128 K 8) Serial (I-2C) nvSRAM
|
Cypress
|
